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| XP162A11C0PR Power MOSFET ETR1125_001 GENERAL DESCRIPTION The XP162A11C0PR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high density mounting possible. APPLICATIONS Notebook PCs Cellular and portable phones On-board power supplies Li-ion battery systems FEATURES Low On-State Resistance : Rds(on) = 0.15@ Vgs = -10V : Rds(on) = 0.28@ Vgs = -4.5V Ultra High-Speed Switching Driving Voltage : -4.5V Gate Protect Diode Built-in P-Channel Power MOSFET DMOS Structure Small Package : SOT-89 PIN CONFIGURATION PIN ASSIGNMENT PIN NUMBER 1 2 3 PIN NAME G D S FUNCTION Gate Drain Source EQUIVALENT CIRCUIT ABSOLUTE MAXIMUM RATINGS Ta = 25 PARAMETER Drain-Source Voltage Gate-Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Channel Power Dissipation * Channel Temperature Storage Temperature Range SYMBOL RATINGS Vdss Vgss Id Idp Idr Pd Tch Tstg -30 20 -2.5 -10 -2.5 2 150 -55~150 UNITS V V A A A W * When implemented on a ceramic PCB 1/5 XP162A11C0PR ELECTRICAL CHARACTERISTICS DC Characteristics PARAMETER Drain Cut-Off Current Gate-Source Leak Current Gate-Source Cut-Off Voltage Drain-Source On-State Resistance*1 Forward Transfer Admittance*1 Body Drain Diode Forward Voltage SYMBOL Idss Igss Vgs(off) Rds(on) | Yfs | Vf CONDITIONS Vds= -30V, Vgs= 0V Vgs= 20V, Vds= 0V Id= -1mA, Vds= -10V Id= -1.5A, Vgs= -10V Id= -1.5A, Vgs= -4.5V Id= -1.5A, Vds= -10V If= -2.5A, Vgs= 0V MIN. -1.0 TYP. 0.11 0.20 2.5 -0.85 MAX. -10 10 -2.5 0.15 0.28 -1.1 Ta = 25 UNITS A A V S V *1 Effective during pulse test. Dynamic Characteristics PARAMETER Input Capacitance Output Capacitance Feedback Capacitance SYMBOL Ciss Coss Crss Vds= -10V, Vgs=0V f= 1MHz CONDITIONS MIN. TYP. 280 200 90 MAX. - Ta = 25 UNITS pF pF pF Switching Characteristics PARAMETER Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time SYMBOL td (on) tr td (off) tf Vgs= -5V, Id= -1.5A Vdd= -10V CONDITIONS MIN. TYP. 10 30 20 35 MAX. - Ta = 25 UNITS ns ns ns ns Thermal Characteristics PARAMETER Thermal Resistance (Channel-Ambience) SYMBOL Rth (ch-a) CONDITIONS Implement on a ceramic PCB MIN. TYP. 62.5 MAX. UNITS /W 2/5 XP162A11C0PR TYPICAL PERFORMANCE CHARACTERISTICS 3/5 XP162A11C0PR TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (11) Standardized transition Thermal Resistance vs. Pulse Width 4/5 XP162A11C0PR 1. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this catalog is up to date. 2. We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this catalog. 3. Please ensure suitable shipping controls (including fail-safe designs and aging protection) are in force for equipment employing products listed in this catalog. 4. The products in this catalog are not developed, designed, or approved for use with such equipment whose failure of malfunction can be reasonably expected to directly endanger the life of, or cause significant injury to, the user. (e.g. Atomic energy; aerospace; transport; combustion and associated safety equipment thereof.) 5. Please use the products listed in this catalog within the specified ranges. Should you wish to use the products under conditions exceeding the specifications, please consult us or our representatives. 6. We assume no responsibility for damage or loss due to abnormal use. 7. All rights reserved. No part of this catalog may be copied or reproduced without the prior permission of Torex Semiconductor Ltd. 5/5 |
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